2017

P. Zheng, S.W. Kim, D. Connelly, K. Kato, F. Ding, L. Rubin, and T.-J. King Liu, Sub-Lithographic Patterning via Tilted Ion Implantation for Scaling beyond the 7 nm Technology Node, IEEE Trans. Electron Dev., vol. 64, no. 1, pp. 231-236, Jan 2017. doi: 10.1109/TED.2016.2622284

W.J. Ong, F. Bertani, E. Dalcanale, and T.M. Swager, Redox Switchable Thianthrene-Cavitands, Synthesis, vol. 49, no. 2, pp. 358-364, Jan 2017. doi: 10.1055/s-0036-1588659

2016

K. Kato, V. Stojanović, and T.-J. King Liu, Embedded Nano-Electro-Mechanical Memory for Energy-Efficient Reconfigurable Logic, IEEE Electron Device Lett., vol. 37, no. 12, pp. 1563-1565, Dec 2016. doi: 10.1109/LED.2016.2621187

R. Sajjad, W. Chern, J.L. Hoyt, and D.A. Antoniadis, Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs, IEEE Trans. Electron Dev., vol. 63, no. 11, pp. 4380-4387, Nov 2016. doi: 10.1109/TED.2016.2603468

S.B. Desai, S.R. Madhvapathy, A.B. Sachid, J.P. Llinas, Q. Wang, G.H. Ahn, G. Pitner, M.J. Kim, J. Bokor, C. Hu, H.-S.P. Wong, and A. Javey, MoS2 Transistors with 1-Nanometer Gate Lengths, Science, vol. 354, no. 6308, pp. 99-102, Oct 2016. doi: 10.1126/science.aah4698   [Full Paper]

A. Vardi and J.A. del Alamo, Sub-10 nm Fin-Width Self-Aligned InGaAs FinFETs, IEEE Electron Device Lett, vol. 37, no. 9, pp. 1104-1107, Sept 2016. doi: 10.1109/LED.2016.2596764

W. S. Ko, I. Bhattacharya, T-T. D. Tran, K. W. Ng, S. Gerke, and C. Chang-Hasnain, Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon, Sci. Rep., vol. 6, no. 33368, Sept 2016. doi: 10.1038/srep33368

J.A. del Alamo, D.A. Antoniadis, J. Lin, W. Lu, A. Vardi, and X. Zhao, Nanometer-Scale III-V MOSFETs, IEEE J. Electron Devices Soc., vol. 4, no. 5, Sept 2016. doi: 10.1109/JEDS.2016.2571666

T. Marangoni T, D. Haberer, D.J. Rizzo, R.R. Cloke, and F.R. Fischer, Heterostructures through Divergent Edge Reconstruction in Nitrogen-Doped Segmented Graphene Nanoribbons, Chem. Eur. J., vol. 22, no. 37, pp. 13037-13040, Aug 2016. doi: 10.1002/chem.201603497

J.T. Teherani, S. Agarwal, W. Chern, P.M. Solomon, E. Yablonovitch, and D.A. Antoniadis, Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance, J. Appl. Phys., vol. 120, no. 8, pp. 084507, Aug 2016. doi: 10.1063/1.4960571

J. Lin, L. Czornomaz, N. Daix, D.A. Antoniadis, and J.A. del Alamo, Ultrathin Body InGaAs MOSFETs on III-V-On-Insulator Integrated with Silicon Active Substrate (III-V-OIAS), IEEE Trans. Electron Dev., vol. 63, no. 8, pp. 3088-3095, Aug 2016. doi: 10.1109/TED.2016.2579642

J. Gorchon, Y. Yang, and J. Bokor, Model for Multishot All-Thermal All-Optical Switching in Ferromagnets, Phys. Rev. B, vol. 94, no.2, pp. 020409, Jul 2016. doi: 10.1103/PhysRevB.94.020409

J. Hong, A. Hadjikhani, M. Stone, P. Liang, F. Allen, V. Safonov, J. Bokor, and S. Khizroev, The Physics of Spin-transfer Torque Switching in Magnetic Tunneling Junctions in Sub-10-nm Size Range, IEEE Trans. Magn., vol. 52, no. 7, pp. 1-4, Jul 2016. doi: 10.1109/TMAG.2016.2530622

C. Heidelberger and E.A. Fitzgerald, Heavy P-Type Carbon Doping of MOCVD GaAsP Using CBRCl3, J. Cryst. Growth, vol. 446, pp. 7–11, Jul 2016. doi: 10.1016/j.jcrysgro.2016.04.028

M. Amani, R. A. Burke, X. Ji, P. Zhao, D.-H. Lien, P. Taheri, G. H. Ahn, D. Kiriya, J. W. Ager III, E. Yablonovitch, J. Kong, M. Dubey, and A. Javey, High Luminescence Efficiency in MoS2 Grown by Chemical Vapor Deposition, ACS Nano., vol. 10, no. 7, pp. 6535-6541, Jun 2016. doi: 10.1021/acsnano.6b03443

E. M. Sletten and T. M. Swager, Readily Accessible Multifunctional Fluorous Emulsions, Chem. Sci, vol. 7, pp. 5091-5097, Apr 2016. doi: 10.1039/C6SC00341A

J. Lin, X. Cai, Y. Wu, D.A. Antoniadis, and J.A. del Alamo, Record Maximum Transconductance of 3.45 mS/um for III-V FETs, IEEE Electron Device Letts., vol. 37, no. 4, pp. 381-384, Apr 2016. doi: 10.1109/LED.2016.2529653

Y. Kang, J. Bokor, and V. Stojanović, Design Requirements for a Spintronic MTJ Logic Device for Pipelined Logic Applications, IEEE Trans. Electron Dev., vol. 63, no. 4, pp. 1754-1761, Apr 2016. doi: 10.1109/TED.2016.2527046

J. Lin, Y. Wu, J.A. del Alamo, and D.A. Antoniadis, Analysis of Resistance and Mobility in InGaAs Quantum-Well MOSFETs from Ballistic to Diffusive Regimes, IEEE Trans. Electron Dev., vol. 63, no. 4, pp. 1464-1470, Apr 2016. doi: 10.1109/TED.2016.2532604

J. Hong, B. Lambson, S. Dhuey, and J. Bokor, Experimental Test of Landauer's Principle in Single-Bit Operations on Nanomagnetic Memory Bits, Sci. Adv., vol. 2, no. 3, e1501492, Mar 2016. doi: 10.1126/sciadv.1501492

J. Lin, D.A. Antoniadis, and J.A. del Alamo, InGaAs Quantum-Well MOSFET Arrays for Nanometer-Scale Ohmic Contact Characterization, IEEE Trans. Electron Dev., vol. 63, no. 3, pp. 1020-1026, Mar 2016. doi: 10.1109/TED.2016.2518206

T. Roy, M. Tosun, M. Hettick, G.H. Ahn, C. Hu, and A. Javey, 2D-2D Tunneling Field-Effect Transistors Using WSe2/SnSe2 Heterostructures, Appl. Phys. Lett., vol. 108, p. 083111, Feb 2016. doi: 10.1063/1.4942647

J. H. Kim, D. Fu, S. Kwon, K. Liu, J. Wu and J. Y. Park, Crossing Thermal Lubricity and Electronic Effects in Friction: Vanadium Dioxide Under the Metal-Insulator Transition, Adv. Mater. Int., vol. 3, no. 2, pp. 1500388 (1 of 7), Jan 2016. doi: 10.1002/admi.201500388

K. Kato, T.-J. King Liu and V. Stojanović, Non-Volatile Nano-Electro-Mechanical Memory for Energy-Efficient Data Searching, IEEE Electron Device Lett., vol. 37, no. 1, pp. 31-34, Jan 2016. doi: 10.1109/LED.2015.2504955

2015

M. M. Sabry Aly, M. Gao, G. Hills, C.-S. Lee, G. Pitner, M. M. Shulaker, T. F. Wu, M. Asheghi, J. Bokor, F. Franchetti, K. E. Goodson, C. Kozyrakis, I. Markov, K. Olukotun, L. Pileggi, E. Pop, J. Rabaey, C. Re, H.-S. P. Wong, and S. Mitra, Energy-Efficient Abundant-Data Computing: The N3XT 1,000x, Computer, vol. 48, no. 12, pp. 24-33, Dec 2015.

R. M. Iutzi and E. A. Fitzgerald, Conductance Slope and Curvature Coefficient of InGaAs/GaAsSb Heterojunctions at Varying Band Alignments and its Implication on Digital and Analog Applications, J. Appl. Phys., vol. 118, pp. 235702(1-11), Dec 2015. doi: 10.1063/1.493792   [Full Paper]

J. Lin, D. A. Antoniadis, and J. A. del Alamo, Impact of Intrinsic Channel Scaling on InGaAs Quantum-Well MOSFETs, IEEE Trans. Electron Dev., vol. 62, no. 11, pp. 3470-3476, Nov 2015. doi: 10.1109/TED.2015.2444835

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. K. C., M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager III, X. Zhang, E. Yablonovitch, and A. Javey, Near-Unity Photoluminescence Quantum Yield in MoS2, Science, vol 350, no. 6264, pp. 1065-1068, Nov 2015. doi: 10.1126/science.aad2114   [Full Paper]

K. Liu, C.L., Hsin, D.Y. Fu, J. Suh, S. Tongay, M. Chen, Y.H. Sun, A.M. Yan, J. Park, K.M. Yu, W.L. Guo, A. Zettl, H.M. Zheng, D.C. Chrzan, and J. Wu, Self-Passivation of Defects: Effects of High-Energy Particle Irradiation on the Elastic Modulus of Multilayer Graphene, Adv. Mater., vol. 27, no. 43, pp. 6841-6847, Oct 2015. doi: 10.1002/adma.201501752

J. H. Kim, D. Fu, S. Kwon, K. Liu, J. Wu, and J.Y. Park, Crossing the Thermal Lubricity and Electronic Effects in Friction: Vanadium Dioxide Under Metal-Insulator Transition, Adv. Mater. Interfaces, Oct 2015. doi: 10.1002/admi.201500388

K. Liu and J. Wu, Mechanical Properties of Two-Dimensional Materials and Heterostructures, J. Mater. Res., Oct 2015. doi: 10.1557/jmr.2015.324

A. Pattabi, Z. Gu, J. Gorchon, Y. Yang, J. Finley, O. J. Lee, H. A. Raziq, S. Salahuddin and J. Bokor, Direct Optical Detection of Current Induced Spin Accumulation in Metals by Magnetization-Induced Second Harmonic Generation, Appl. Phys. Lett., vol. 107, no. 15, p 152404, Oct 2015. doi: 10.1063/1.4933094

I-R. Chen, C. Qian, E. Yablonovitch and T.-J. King Liu, Nanomechanical Switch Design to Overcome the Surface Adhesion Energy Limit, IEEE Electron Device Lett., vol. 36, no. 9, pp. 963-965, Sep 2015. doi: 10.1109/LED.2015.2463119

R. M. Iutzi and E. A. Fitzgerald, Defect and Temperature Dependence of Tunneling in InAs/GaSb Heterojunctions, Appl. Phys. Lett., vol. 107, p 133504, Sep 2015. doi: 10.1063/1.4931905

A. P. Peschot, C. Qian, and T.-J. King Liu, Nanoelectromechanical Switches for Low-Power Digital Computing, IEEE Trans. Electron Dev., vol. 6, no. 8, pp. 1046-1065, Aug 2015. doi:10.3390/mi6081046   [Full Paper]

Y. Chen, I-R. Chen, J. Yaung, and T.-J. King Liu, Experimental Studies of Contact Detachment Delay in Microrelays for Logic Applications, IEEE Trans. Electron Dev., vol. 62, no. 8, pp. 2695-2699, Aug 2015. doi: 10.1109/TED.2015.2446960

W. S. Ko, T.-T. D. Tran, I. Bhattacharya, K. W. Ng, H. Sun, and C. J. Chang-Hasnain, Illumination Angle Insensitive Single Indium Phosphide Tapered Nanopillar Solar Cell, Nano Lett., vol. 15, no. 8, pp. 4961-4967, Aug 2015. doi: 10.1021/acsnano.5b02476   [Full Paper]

F. Niroui, A. I. Wang, E. M. Sletten, Y. Song, J. Kong, E. Yablonovitch, T.M. Swager, J.H. Lang, and V. Bulović, Tunneling Nanoelectromechanical Switches Based on Compressible Molecular Thin Films, ACS Nano, vol. 9, no. 8, pp. 7886-7894, Aug 2015. doi: 10.1021/acsnano.5b02476

C. Qian, A. P. Peschot, I-R. Chen, Y. Chen, N. Xu, and T.-J. King Liu, Effect of Body Biasing on the Energy-Delay Performance of Logic Relays, IEEE Electron Device Lett., vol. 36, no. 8, pp. 862-864, Aug 2015. doi: 10.1109/LED.2015.2441116

L. You, O. Lee, D. Bhowmik, D. Labanowski, J. Hong, J. Bokor, and S. Salahuddin, Switching of Perpendicularly Polarized Nanomagnets with Spin Orbit Torque Without an External Magnetic Field by Engineering a Tilted Anisotropy, Proc. Natl. Acad. Sci. U.S.A., vol. 112, no. 33, pp. 10310-10315, Aug 2015. doi: 10.1073/pnas.1507474112

S. Almeida, E. Ochoa, J. Chavez, X. Zhou, and D. Zubia, Calculation of Surface Diffusivity and Residence Time by Molecular Dynamics with Application to Nanoscale Selective-Area Growth, J. Cryst. Growth, vol. 423, pp. 55-60, Aug 2015. doi: 10.1016/j.jcrysgro.2015.04.036

D. Bhowmik, M. E. Nowakowski, L. You, O. Lee, D. Keating, M. Wong, and J. Bokor, and S. Salahuddin, Deterministic Domain Wall Motion Orthogonal to Current Flow due to Spin Orbit Torque, Sci. Rep., vol. 5, p 11823, July 2015. doi:10.1038/srep11823   [Full Paper]

J. Lin, D. A. Antoniadis, and J. A. del Alamo, Physics and Mitigation of Excess Off-state Current in InGaAs Quantum-Well MOSFETs, IEEE Trans. Electron Dev., vol. 62, no. 5, pp. 1448-1455, May 2015. doi: 10.1109/TED.2015.2410292   [Full Paper]

R. Going, T. J. Seok, J. Loo, K. Hsu, and M. C. Wu, Germanium Wrap-Around Photodetectors on Silicon Photonics, Opt. Express, vol. 23, no. 9, p. 11975-11984, May 2015. doi: 10.1364/OE.23.011975   [Full Paper]

M. S. Eggleston and M. C. Wu, Efficient Coupling of an Antenna-Enhanced nanoLED into an Integrated InP Waveguide, Nano Lett., vol. 15, no. 5, pp. 3329–3333, May 2015. doi: 10.1021/acs.nanolett.5b00574

H. Sohn, M. E. Nowakowski, C.-Y. Liang, J. L. Hockel, K. Wetzlar, S. Keller, B. M. McLellan, M. A. Marcus, A. Doran, A. Young, M. Kläui, G. P. Carman, J. Bokor, and R. N. Candler, Electrically-Driven Magnetic Domain Wall Rotation in Multiferroic Heterostructures to Manipulate Suspended On-Chip Magnetic Particles, ACS Nano, vol. 9, no. 5, pp. 4814-4826, Apr 2015. doi: 10.1021/nn5056332

Z. Gu, M. E. Nowakowski, D. B. Carlton, R. Storz, J. Hong, W. Chao, B. Lambson, P. Bennett, M. T. Alam, M. A. Marcus, A. Doran, A. Young, A. Scholl, and J. Bokor, Sub-Nanosecond Signal Propagation in Anisotropy Engineered Nanomagnetic Logic Chains, Nat. Commun., vol. 6, p. 6466, Mar 2015. doi: 10.1038/ncomms7466

S. Artis, C. Amelink, and T.-J. King Liu, Examining the Self-Efficacy of Community College STEM Majors: Factors Related to Four Year Degree Attainment, Community Coll. J. Research and Practice, vol. 39, no. 7, Mar 2015. doi: 10.1080/10668926.2014.941514

H.-S. P. Wong and S. Salahuddin, Memory Leads the Way to Better Computing, Nat. Nanotechnol., vol. 10, pp. 191–194, Mar 2015. doi: 10.1038/nnano.2015.29

M. Eggleston, K. Messer, L. Zhang, E. Yablonovitch, and M.C. Wu, Optical Antenna Enhanced Spontaneous Emission, Proc. Natl. Acad. Sci. U.S.A., vol. 112, no. 6, pp. 1704–1709, Feb 2015. doi: 10.1073/pnas.1423294112   [Full Paper]

A. Vardi, W. Lu, X. Zhao, and J. A. del Alamo, Nano-Scale Mo Ohmic Contacts to III-V Fins, IEEE Electron Device Lett., vol. 36, no. 2, pp. 126-128, Feb 2015. doi: 10.1109/LED.2014.2386311   [Full Paper]

D.-H. Lien, J. S. Kang, M. Amani, K. Chen, M. Tosun, H.-P. Wang, T. Roy, M. S. Eggleston, M. C. Wu, M. Dubey, S.-C. Lee, J.-H. He, and A. Javey, Engineering Light Outcoupling in 2D Materials, Nano Lett., vol. 15, no. 2, pp. 1356–1361, Feb. 2015. doi: 10.1021/nn507278b
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T. Roy, M. Tosun, X. Cao, H. Fang, D.-H. Lien, P. Zhao, Y.-Z. Chen, Y.-L. Chueh, J. Guo, and A. Javey, Dual-Gated MoS2/WSe2 van Der Waals Tunnel Diodes and Transistors, ACS Nano, 9 (2), 2071-2079, Jan 2015. doi: 10.1021/nn507278b   [Full Paper]

Y. Lee, Z. Q. Liu, J. T. Heron, J. D. Clarkson, J. Hong, C. Ko, M. D. Biegalski, U. Aschauer, S. L. Hsu, M. E. Nowakowski, J. Wu, H. M. Christen, S. Salahuddin, J. Bokor, N. A. Spaldin, D. G. Schlom, and R. Ramesh, Large Resistivity Modulation in Mixed-Phase Metallic Systems, Nat. Commun., vol. 6, p. 5969, Jan 2015. doi: 10.1038/ncomms6959   [Full Paper]

B. Koo, E.M. Sletten, and T.M. Swager, Functionalized Poly (3-hexylthiophene)s via Lithium-Bromine Exchange, Macromolecules,, vol. 48, no. 1, pp. 229-235, Jan 2015. doi: 10.1021/ma5019044   [Full Paper]

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